INDIUM PHOSPHIDE
INDIUM PHOSPHIDE
CAS: 22398-80-7
Molecular Formula: InP
INDIUM PHOSPHIDE - Names and Identifiers
| Name | INDIUM PHOSPHIDE |
| Synonyms | InP INDIUM PHOSPHIDE INDIUM(III) PHOSPHIDE Indium phosphide wafer Phosphinidyneindium(III) Phosphinetriylindium(III) metel basisINDIUM PHOSPHIDE |
| CAS | 22398-80-7 |
| EINECS | 244-959-5 |
INDIUM PHOSPHIDE - Physico-chemical Properties
| Molecular Formula | InP |
| Molar Mass | 145.79 |
| Density | 4,787 g/cm3 |
| Melting Point | 1070°C |
| Water Solubility | Insoluble in water. |
| Appearance | Form pieces, color Black |
| Storage Condition | Room Temprature |
| MDL | MFCD00016153 |
| Physical and Chemical Properties | Chemical properties Indium phosphide dark gray crystals with asphalt luster. Melting point 1070 ℃. Dissociative decompression at melting point is 2.75 Mpa. Very slightly soluble in inorganic acid. Dielectric constant: 10.8. Electron mobility: about 4600 cm2/V?s. Hole mobility: about 150 cm2/V?s. It has the characteristics of a semiconductor. |
| Use | Applications for semiconductor materials, for optical fiber communication technology, need 1.1~1.6μm range of light source and receiver. The In-GaAsP double heterojunction laser grown on InP substrate can meet the requirements of both lattice matching and wavelength range. |
INDIUM PHOSPHIDE - Risk and Safety
| Hazard Symbols | T - Toxic |
| Safety Description | S24/25 - Avoid contact with skin and eyes. S45 - In case of accident or if you feel unwell, seek medical advice immediately (show the label whenever possible.) S53 - Avoid exposure - obtain special instructions before use. |
| UN IDs | 3288 |
| WGK Germany | 3 |
| RTECS | NL1800000 |
| TSCA | Yes |
INDIUM PHOSPHIDE - Upstream Downstream Industry
| Raw Materials | Phosphorus trichloride Quartz Indium |
INDIUM PHOSPHIDE - Nature
| crystal structure | Cubic, Sphalerite Structure - Space Group F(-4)3m |
| Merck | 14,4953 |
| (IARC) Carcinogen Classification | 2A (Vol. 86) 2006 |
| EPA chemical information | Indium phosphide (InP) (22398-80-7) |
Last Update：2024-04-10 22:29:15
INDIUM PHOSPHIDE - Uses and synthesis methods
production method
Preparation of indium phosphide single crystal in a high-pressure single crystal furnace is the most important method, and the dislocation density of the crystal is reduced by doping electronic impurities. In the gas phase epitaxy, the disproportionation method of the In-PCl3-H2 system is mostly used. In this process, the indium phosphide layer is grown by the reaction between indium (99.9999%) and phosphorus trichloride (99.999%).
gas phase epitaxy places the Shi Ying reaction tube in a double-temperature zone electric furnace. The purified high-purity hydrogen is metered in, and the hydrogen is also used to dilute phosphorus trichloride. At this time, the Peng bubble device is kept at 0 ℃, and the linear velocity of hydrogen passing through the reaction tube is 14 cm/min. Epitaxial growth is divided into induction stages.
In the first stage, the quartz boat containing indium is placed in the source area of the electric furnace, hydrogen is introduced and heated to 700~850 ℃, then phosphorus trichloride is introduced with hydrogen, and it is reduced to phosphorus vapor and hydrogen chloride above the indium source. Cadmium hydrogen reacts with indium to generate indium chloride vapor that migrates in the tube. Phosphorus dissolves in indium until it is saturated.
In the second stage, the indium source is kept in the original position without heating. After the single crystal substrate is placed in the second heating zone of the electric furnace, it is heated to 600~750°C in a hydrogen atmosphere. First, hydrogen is used to introduce phosphorus trichloride into the tube to corrode the substrate in the gas phase and clean the surface of the substrate. Then the hydrogen is directly introduced into the reaction tube, and the source is heated to its supersaturation temperature (in operation, this temperature is 100 ℃ higher than the temperature of the substrate crystal). Then the phosphorus trichloride is introduced by hydrogen bubbling. At this time, the phosphorus vapor reacts with the indium monochloride generated in the source region, and the indium phosphide layer is deposited on the substrate. When the epitaxial growth is completed, pure hydrogen is introduced into the system, the two temperature zones are cooled to room temperature, the product is taken out, and the finished product of indium phosphide is obtained.
category
toxic substances
flammability hazard characteristics
High heat produces toxic phosphorus oxide smoke
storage and transportation features
Warehouse ventilation and low temperature drying
fire extinguishing agent
Dry powder, foam, sand, carbon dioxide, mist water
occupational standards
TWA 0.1 mg (indium)/m3
Last Update：2024-04-10 22:29:15
INDIUM PHOSPHIDE - Security information
| toxic substance data | 22398-80-7(Hazardous Substances Data) |
Last Update：2024-04-10 22:29:15
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Raw Materials for INDIUM PHOSPHIDE